HMT121R7BFR4C-H9 - Hynix 4GB DDR3-1333MHz PC3-10600 ECC Registered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module - GTD

Technical Specifications:
- Memory Size: 4GB
- Memory Technology: DDR3 SDRAM
- Memory Speed: 1333 MHz
- Memory Standard: PC3-10600
- Error Checking: ECC
- Signal Processing: Registered
- CAS Latency: CL9
- Number of Pins: 240-pin
- Rank: Dual Rank
- Voltage: 1.35V
- Form Factor: DIMM
- Memory Configuration: 512M x 72

Helpful Notes:
- ECC memory is designed for servers and workstations that require high reliability and stability.
- Registered memory is used in high-end systems to reduce electrical load and improve signal integrity.
- Low voltage memory modules consume less power and generate less heat, making them ideal for energy-efficient systems.