HMT325A7EFR8A-H9 - Hynix 2GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 204-Pin SoDimm 1.35v Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 2GB
- Bus Speed: PC3-10600 (DDR3-1333)
- Error Correction Code (ECC): Yes
- Registered/Unbuffered: Unbuffered
- CAS Latency: CL9
- Pin Count: 204-pin
- Form Factor: SoDimm
- Voltage: 1.35V
- Rank: Dual Rank
- Module Configuration: 256M x 64
- Memory Organization: x8

Helpful Notes:
- ECC memory is designed for servers and workstations, providing an extra layer of data protection.
- The low voltage of 1.35V reduces power consumption and heat generation, making it ideal for use in laptops and other mobile devices.
- Dual rank memory modules offer better performance than single rank modules, especially in applications that require large amounts of memory.