HMT351A7EFR8C-H9 - Hynix 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module

Here are the technical specifications for the Hynix 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1600MHz
4. Data Integrity Check: ECC
5. CAS Latency: CL11
6. Pin Count: 204-pin
7. Rank: Dual Rank
8. Form Factor: SoDimm
9. Error Correction: Unbuffered
10. Voltage: 1.5V
11. Technology: 1.5V DDR3 SDRAM
12. Module Configuration: 512M x 64

Helpful Notes:
1. This memory module is compatible with laptops and other mobile devices that use DDR3 SDRAM.
2. ECC memory is designed to detect and correct single-bit errors, ensuring data integrity.
3. Dual rank memory modules provide better performance than single rank modules, especially in systems that support dual-channel memory.