HMT351S6AFR8A-H9 - Hynix 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Dual Rank Memory Module

Here are the technical specifications for the Hynix 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm Dual Rank Dual Rank Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Speed: 1333MHz
4. Latency Timings: CL9
5. Data Integrity Check: Non-ECC
6. Form Factor: SO-DIMM 204-pin
7. Rank: Dual Rank
8. Module Configuration: 512M x 64
9. Voltage: 1.5V
10. Pin Configuration: 204 pins
11. Error Correction Code: Non-ECC
12. CAS Latency: CL9

Helpful notes:
1. This memory module is designed for use in laptops and other mobile devices.
2. Dual rank memory modules offer better performance than single rank modules.
3. DDR3 memory is compatible with most modern computers and offers faster speeds and lower power consumption than DDR2 memory.