HMT351S6BFR8A-H9 - Hynix 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1333MHz
- Latency: CL9
- Pin Count: 204-Pin SoDimm
- Voltage: 1.35V (Low Voltage)
- Rank: Dual Rank
- Error Correction Code: Non-ECC
- Buffered/Unbuffered: Unbuffered
- Form Factor: SoDimm
- CAS Latency: 9
- Memory Configuration: 512M x 64

Helpful Notes:
- Low voltage design reduces power consumption and heat generation
- Dual rank memory module provides better performance in multitasking applications
- Unbuffered memory is faster and less expensive than buffered memory.