HMT451S6AFR6A-PB - Hynix 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Size: 4GB
- Memory Type: DDR3 SDRAM
- Memory Speed: 1600 MHz
- Memory Standard: PC3-12800
- CAS Latency: CL11
- Error Checking: Non-ECC
- Buffering: Unbuffered
- Rank: Dual Rank
- Pin Count: 204-pin
- Voltage: 1.35V (Low Voltage)
- Form Factor: SoDimm
- Compatibility: Compatible with systems that support DDR3 1600MHz memory

Helpful Notes:
- This memory module is designed for use in laptops and other mobile devices that require low voltage memory.
- Dual rank memory modules offer better performance than single rank modules.
- Non-ECC memory is less expensive than ECC memory but does not provide the same level of error correction.