Samsung M312L5628BT0-CBQ0 | 2GB DDR-266MHz PC2100 ECC Registered CL2.5 184-Pin DIMM Memory Module

Here are 12 technical specifications for the Samsung 2GB DDR-266MHz PC2100 ECC Registered CL2.5 184-Pin DIMM Memory Module:

1. Memory Type: DDR SDRAM
2. Capacity: 2GB
3. Memory Speed: 266MHz
4. Latency Timings: CL2.5
5. Data Integrity Check: ECC
6. Registered/Unbuffered: Registered
7. Form Factor: DIMM 184-pin
8. Voltage: 2.5V
9. Error Correction: Advanced ECC
10. Rank: Dual Rank
11. Number of Modules: 1 x 2GB
12. CAS Latency: CL2.5

Helpful notes:
1. This memory module is compatible with servers and workstations that require DDR-266MHz memory.
2. ECC memory is designed to detect and correct single-bit errors, providing an extra layer of data integrity.
3. Dual-rank memory modules provide better performance than single-rank modules, but may not be compatible with all systems.