Samsung M379B5273DHO-YKO | 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz (PC3-12800)
- Latency Timing: CL11
- Pin Count: 240-pin DIMM
- Voltage: 1.35V (Low Voltage)
- Error Correction Code: Non-ECC
- Buffered/Unbuffered: Unbuffered
- Rank: Dual Rank
- Memory Configuration: 512M x 8
- Chip Organization: x8 based
- Memory Form Factor: DIMM

Helpful Notes:
- Low voltage design reduces power consumption and heat generation
- Dual rank configuration allows for better performance in certain applications
- Unbuffered memory is generally less expensive than buffered memory.