M391B1G73EB0-YK0 - Samsung 8GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical specifications:
- Memory type: DDR3 SDRAM
- Memory capacity: 8 GB
- Memory speed: 1600 MHz
- CAS latency: CL11
- Error checking and correction (ECC): Yes
- Buffered/Unbuffered: Unbuffered
- Pin count: 240
- Pin layout: DIMM
- Voltage: 1.35V
- Rank: Dual
- Form factor: DIMM
- Memory organization: x8

Helpful notes:
- ECC memory is designed for use in servers and workstations where data integrity is critical.
- The low voltage of this memory module can help reduce power consumption and heat generation.
- Dual rank memory modules can improve system performance by allowing for more efficient memory access.