M391B1G73QH0-CMA - Samsung 8GB DDR3-1866MHz PC3-14900 ECC Unbuffered CL13 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 8GB
- Speed: 1866 MHz (PC3-14900)
- CAS Latency: CL13
- Voltage: 1.35V
- ECC: ECC (Error Correction Code)
- Buffered/Unbuffered: Unbuffered
- Form Factor: DIMM 240-pin
- Rank: Dual Rank
- Chip Organization: x8
- Memory Configuration: 1G x 72
- Operating Temperature: 0°C to 85°C

Helpful Notes:
- ECC memory is designed for mission-critical systems that require maximum uptime and data integrity.
- The low voltage of 1.35V reduces power consumption and heat generation, making it ideal for energy-efficient systems.
- Dual rank memory provides better performance than single rank memory in certain applications.