M391B5173QH0-YK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Single Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Data Transfer Rate: 1600MHz
- Latency: CL11
- Error Correction Code (ECC): ECC
- Buffered/Unbuffered: Unbuffered
- Pin Count: 240-Pin DIMM
- Rank: Single Rank
- Voltage: 1.35V
- Form Factor: DIMM
- CAS Latency: 11
- Memory Speed: 1600MHz

Helpful Notes:
- ECC memory is designed for use in servers and workstations, where data integrity is critical.
- Unbuffered memory is faster and less expensive than registered memory, but is limited in the number of modules that can be used in a system.
- Low voltage memory can save power and reduce heat output, making it ideal for use in systems with limited cooling capabilities.