Samsung M391B5273BH1-CH9 | 4GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Size: 4GB
- Memory Technology: DDR3 SDRAM
- Memory Speed: 1333 MHz
- Memory Standard: PC3-10600
- Error Checking: ECC
- Signal Processing: Unbuffered
- CAS Latency: CL9
- Number of Pins: 240-pin
- Rank: Dual Rank
- Voltage: 1.35V
- Form Factor: DIMM
- Module Configuration: 512M x 72

Helpful Notes:
- ECC memory is designed to detect and correct single-bit errors in data.
- The low voltage of 1.35V can help reduce power consumption and heat output in compatible systems.
- Dual rank memory modules provide better performance than single rank modules in certain applications.