M391B5273CH0-CH9 - Samsung 4GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1333MHz (PC3-10600)
- Form Factor: DIMM 240-pin
- Error Correction Code (ECC): Yes
- Buffered/Unbuffered: Unbuffered
- CAS Latency: CL9
- Voltage: 1.35V
- Rank: Dual Rank
- Number of Pins: 240
- Memory Configuration: 512M x 72
- Chip Organization: x8
- Memory Clock: 166MHz

Helpful Notes:
- ECC memory is designed to detect and correct single-bit errors, making it ideal for servers and workstations.
- The low voltage of 1.35V helps to reduce power consumption and heat generation.
- Dual rank memory modules provide better performance than single rank modules in certain applications.