Samsung M391B5673DZ1-CH9 | 2GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Here are the technical specifications for the Samsung 2GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 2GB
3. Memory Speed: 1333MHz
4. Data Integrity Check: ECC
5. CAS Latency: CL9
6. Pin Count: 240-pin DIMM
7. Voltage: 1.35V
8. Rank: Dual Rank
9. Error Correction Code (ECC): Yes
10. Buffered/Unbuffered: Unbuffered
11. Form Factor: DIMM
12. Memory Configuration: 256M x 72

Helpful Notes:
1. ECC memory is designed to detect and correct errors in data that are being read from or written to memory.
2. The low voltage of 1.35V helps to reduce power consumption and heat generation, making it ideal for use in energy-efficient systems.
3. Dual rank memory modules provide better performance than single rank modules, as they allow for more data to be accessed at once.