Samsung M392B5270DH0-YK009 | 4GB DDR3-1600MHz PC3-12800 ECC Registered CL11 240-Pin DIMM 1.35V VLP Memory Module

Here are the technical specifications for the Samsung 4GB DDR3-1600MHz PC3-12800 ECC Registered CL11 240-Pin DIMM 1.35V VLP Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1600MHz
4. Data Integrity Check: ECC
5. CAS Latency: CL11
6. Pin Count: 240-Pin
7. DIMM Type: Registered
8. Voltage: 1.35V
9. Form Factor: VLP (Very Low Profile)
10. Rank: Dual Rank
11. Error Correction Code: SECDED
12. Organization: x8

Helpful Notes:
1. ECC memory is designed to detect and correct single-bit errors, providing greater reliability in critical applications.
2. The low voltage of 1.35V makes this memory module more energy-efficient compared to standard DDR3 memory.
3. The VLP form factor is ideal for use in space-constrained systems such as blade servers and networking equipment.