M393B1K70DH0-CK0Q8 - Samsung 8GB DDR3-1600MHz PC3-12800 ECC Registered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Here are the technical specifications for the Samsung 8GB DDR3-1600MHz PC3-12800 ECC Registered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module:

1. Memory Size: 8GB
2. Memory Technology: DDR3 SDRAM
3. Memory Speed: 1600 MHz
4. Memory Standard: PC3-12800
5. Error Checking: ECC
6. Signal Processing: Registered
7. CAS Latency: CL11
8. Number of Pins: 240-pin
9. Form Factor: DIMM
10. Memory Voltage: 1.35V
11. Rank: Dual Rank
12. Module Configuration: 1024M x 72

Helpful Notes:
1. This memory module is designed for use in servers and workstations.
2. The low voltage of 1.35V reduces power consumption and heat generation.
3. ECC (Error-Correcting Code) technology detects and corrects errors in data transmission, ensuring system stability and reliability.