M393B5170GB0-CH9Q8 - Samsung 4GB DDR3-1333MHz PC3-10600 ECC Registered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1333MHz (PC3-10600)
- Latency Timing: CL9
- Pin Count: 240-pin
- Voltage: 1.35V
- Error Correction Code (ECC): ECC Registered
- Rank: Dual Rank
- Form Factor: DIMM
- Technology: 1.5V and 1.35V DDR3 SDRAM interface
- Memory Configuration: x4
- Module Configuration: 512M x 72

Helpful Notes:
- The low voltage of 1.35V means that this memory module consumes less power and generates less heat than standard voltage memory modules.
- ECC Registered memory is designed for use in servers and workstations, where data integrity is critical.
- Dual Rank memory modules offer better performance than Single Rank memory modules, as they allow for more data to be accessed at once.