M393B5273CH0YH9 - Samsung 4GB DDR3-1333MHz PC3-10600 ECC Registered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Here are the technical specs for the Samsung 4GB DDR3-1333MHz PC3-10600 ECC Registered CL9 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1333MHz
4. Data Integrity Check: ECC
5. Registered/Unbuffered: Registered
6. CAS Latency: CL9
7. Pin Count: 240-pin
8. Voltage: 1.35V
9. Rank: Dual Rank
10. Error Correction Code (ECC): Yes
11. Buffered/Unbuffered: Registered
12. Form Factor: DIMM

Helpful Notes:
1. Low voltage of 1.35V reduces power consumption and heat generation.
2. ECC helps detect and correct errors in data transmission, making it ideal for servers and workstations.
3. Dual Rank memory provides better performance in multi-tasking and data-intensive applications.