M393B5273DH0-CK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Registered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz (PC3-12800)
- Latency Timings: CL11
- Form Factor: DIMM 240-pin
- Data Integrity Check: ECC
- Rank: Dual Rank
- Voltage: 1.35V (low voltage)
- Error Correction: Registered
- Buffering: Fully Buffered
- CAS Latency: 11
- Memory Configuration: 512M x 72

Helpful Notes:
- ECC memory is designed for use in servers and workstations to detect and correct errors in data.
- Low voltage memory modules consume less power and generate less heat, making them ideal for use in energy-efficient systems.
- Fully buffered memory modules have a higher memory bandwidth and are more reliable than unbuffered memory modules.