Samsung M395T5160EH4-CE7 | 4GB DDR2-800MHz PC2-6400 ECC Fully Buffered CL5 240-Pin DIMM Dual Rank Memory Module

Here are 12 technical specifications for the Samsung 4GB DDR2-800MHz PC2-6400 ECC Fully Buffered CL5 240-Pin DIMM Dual Rank Memory Module:

1. Memory Type: DDR2 SDRAM
2. Capacity: 4GB
3. Data Transfer Rate: 800MHz
4. Latency Timings: CL5
5. Form Factor: 240-pin DIMM
6. Error Correction Code: ECC
7. Buffered/Unbuffered: Fully Buffered
8. Rank Configuration: Dual Rank
9. Voltage: 1.8V
10. Operating Temperature: 0°C to 85°C
11. RoHS Compliant: Yes
12. Compatibility: Compatible with systems that support DDR2 800MHz memory

Helpful Notes:
1. ECC memory is designed for mission-critical systems that require high reliability and error correction capabilities.
2. Fully buffered memory uses an advanced buffering technology that reduces electrical load on the memory controller, allowing for higher memory capacities and better performance.
3. Dual rank memory modules provide better performance than single rank modules, as they allow for more efficient memory access and improved memory bandwidth.