M395T5160QZ4-CE760 - Samsung 4GB DDR2-800MHz PC2-6400 Fully Buffered CL6 240-Pin DIMM 1.8V Dual Rank Memory Module

Technical Specifications:
- Memory Size: 4GB
- Memory Technology: DDR2 SDRAM
- Memory Speed: 800MHz (PC2-6400)
- CAS Latency: CL6
- Pin Count: 240-pin
- Error Checking: ECC
- Signal Processing: Fully Buffered
- Rank: Dual Rank
- Voltage: 1.8V
- Form Factor: DIMM
- Manufacturer: Samsung
- Compatibility: Desktop computers

Helpful Notes:
- Fully Buffered memory modules are designed for servers and workstations, not for consumer-grade computers.
- Dual Rank memory modules are faster than Single Rank modules, as they can access more data at once.
- ECC (Error Correcting Code) memory can detect and correct errors in data, making it more reliable for critical applications.