M471B1G73BH0-YK0 - Samsung 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

1. Memory Type: DDR3 SDRAM
2. Capacity: 8GB
3. Memory Speed: 1600 MHz
4. CAS Latency: CL11
5. Pin Count: 204
6. Form Factor: SoDimm
7. Voltage: 1.35V (Low Voltage)
8. Rank: Dual Rank
9. Error Correction Code (ECC): Non-ECC
10. Buffered/Unbuffered: Unbuffered
11. Chip Organization: x8
12. Memory Configuration: 512M x 8

Helpful Notes:
1. The low voltage of this memory module helps to reduce power consumption and heat generation.
2. Dual rank memory modules provide better performance than single rank modules.
3. This memory module is compatible with laptops and other devices that use DDR3 SoDimm memory.