Samsung M471B1G73EBO-YKO | 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module

Here are 12 technical specifications for the Samsung 8GB DDR3-1600MHz Memory Module:

1. Memory type: DDR3 SDRAM
2. Memory speed: 1600 MHz
3. Memory size: 8 GB
4. Memory form factor: SODIMM 204-pin
5. CAS latency: CL11
6. Data integrity check: Non-ECC
7. Rank: Dual rank
8. Voltage: 1.35V
9. Error checking: Non-parity
10. Module configuration: 1024M x 64
11. Chip organization: X8
12. Memory timings: 11-11-11

Helpful notes:
1. This memory module is compatible with laptops and other mobile devices that require DDR3 SDRAM.
2. The dual rank configuration allows for better performance in multitasking and memory-intensive applications.
3. The low voltage of 1.35V helps to reduce power consumption and heat generation.