M471B1G73QH0-YK0LM - Samsung 8GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 8GB
- Speed: 1600MHz (PC3-12800)
- CAS Latency: CL11
- Pin Count: 204-Pin
- Voltage: 1.35V
- Rank: Dual Rank
- Error Correction Code: Non-ECC
- Buffered/Unbuffered: Unbuffered
- Form Factor: SoDimm
- Memory Configuration: 512M x 8
- Memory Organization: x64

Helpful Notes:
1. This memory module is compatible with laptops and other devices that use DDR3 SDRAM.
2. The low voltage of 1.35V can help reduce power consumption and heat generation.
3. Dual rank memory modules have better performance than single rank modules, especially in multitasking scenarios.