M471B5273CH0-CK0B - Samsung 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz
- Data Integrity Check: Non-ECC
- Error Correction: Unbuffered
- CAS Latency: CL11
- Pin Count: 204
- Rank: Dual Rank
- Form Factor: SO-DIMM
- Voltage: 1.5V
- Technology: 30nm
- Number of Chips: 8

Helpful Notes:
- This memory module is compatible with laptops and other devices that use DDR3 SO-DIMM memory.
- It operates at a voltage of 1.5V, which is the standard for DDR3 memory.
- The CL11 latency ensures that the memory can quickly access data when needed.