Samsung M471B5273EB0-YMA | 4GB DDR3-1866MHz PC3-14900 non-ECC Unbuffered CL13 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Size: 4GB
- Memory Technology: DDR3 SDRAM
- Memory Speed: 1866 MHz
- Memory Standard: PC3-14900
- CAS Latency: CL13
- Error Checking: Non-ECC
- Signal Processing: Unbuffered
- Number of Pins: 204-pin
- Form Factor: SoDimm
- Data Integrity Check: Dual Rank
- Voltage: 1.35V
- Module Configuration: 512M x 64
- Memory Rank: 2Rx8

Helpful Notes:
- This memory module is compatible with laptops and other portable devices that use DDR3 SDRAM.
- The low voltage of 1.35V helps to reduce power consumption and heat generation.
- Dual rank memory provides better performance than single rank memory by allowing for faster data access.