M471B5673EH1-YH9 - Samsung 2GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

1. Memory Type: DDR3 SDRAM
2. Capacity: 2GB
3. Memory Speed: 1333 MHz
4. CAS Latency: CL9
5. Pin Count: 204
6. Form Factor: SODIMM
7. Voltage: 1.35V
8. Technology: Non-ECC Unbuffered
9. Rank: Dual Rank
10. Error Correction Code (ECC): No
11. Operating Temperature: 0°C to 85°C
12. RoHS Compliant: Yes

Helpful Notes:
1. This memory module is compatible with laptops and other mobile devices that require DDR3 SODIMM memory.
2. The low voltage of 1.35V helps to reduce power consumption and improve battery life in mobile devices.
3. Dual rank memory provides better performance than single rank memory modules.