M471B5774EB0-YK0 - Samsung 2GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Memory Module

1. Memory Type: DDR3 SDRAM
2. Capacity: 2 GB
3. Memory Speed: 1600 MHz
4. Form Factor: 204-pin SO-DIMM
5. CAS Latency: CL11
6. Error Correction Code (ECC): Non-ECC
7. Buffered/Unbuffered: Unbuffered
8. Voltage: 1.35V (low voltage)
9. Rank: Single Rank
10. Number of Modules: 1
11. Pin Configuration: 204 pins
12. Memory Architecture: x8

Helpful Notes:
1. This memory module is compatible with laptops and other mobile devices that use DDR3 SO-DIMM memory.
2. The low voltage of 1.35V helps to reduce power consumption and heat generation.
3. The CAS latency of CL11 ensures fast and efficient data transfer between the memory module and the processor.