M474A1G43DB0-CPB - Samsung 8GB DDR4-2133MHz PC4-17000 ECC Unbuffered CL15 260-Pin SoDimm 1.2V Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR4 SDRAM
- Capacity: 8GB
- Memory Speed: 2133 MHz
- CAS Latency: CL15
- Pin Count: 260-pin
- Rank: Dual Rank
- Error Correction Code (ECC): ECC
- Buffered/Unbuffered: Unbuffered
- Voltage: 1.2V
- Form Factor: SoDimm
- Technology: 3D V-NAND
- Operating Temperature: 0°C to 85°C

Helpful Notes:
- ECC memory is designed for use in servers and workstations, where data integrity is critical.
- Dual rank memory modules offer better performance than single rank modules.
- The 3D V-NAND technology used in this memory module provides higher density and better performance compared to traditional 2D NAND.