Samsung M474B1G73EB0-YK0 | 8GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 8GB
- Data Transfer Rate: 1600MHz
- CAS Latency: CL11
- Error Correction Code (ECC): Yes
- Buffered/Unbuffered: Unbuffered
- Pin Count: 204-Pin
- Rank: Dual Rank
- Voltage: 1.35V
- Form Factor: SoDimm
- Technology: Low Voltage
- Memory Speed: 1600MHz

Helpful Notes:
- This memory module is designed for use in servers and workstations.
- ECC memory is designed to detect and correct single-bit errors, which can help prevent system crashes and data corruption.
- The low voltage technology of this memory module can help reduce power consumption and heat generation in your system.