Samsung M474B5173BH0-YK0 | 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz (PC3-12800)
- Latency: CL11
- Pin Count: 204-Pin
- Form Factor: SoDimm
- Voltage: 1.35V (Low Voltage)
- Error Correction Code (ECC): ECC
- Buffering: Unbuffered
- Rank: Single Rank
- CAS Latency: 11
- Memory Configuration: x8

Helpful Notes:
- ECC memory is designed for servers and workstations where data integrity is critical.
- Low voltage memory is more energy-efficient and generates less heat, making it ideal for laptops and small form factor systems.
- Make sure to check if your device is compatible with DDR3 memory before purchasing.