M474B5173EB0-YK0 - Samsung 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Single Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1600MHz (PC3-12800)
- Rank: Single
- Pin Count: 204-Pin SoDimm
- Voltage: 1.35V (Low Voltage)
- Error Correction Code (ECC): Yes
- Buffered/Unbuffered: Unbuffered
- CAS Latency: CL11
- Form Factor: SoDimm
- Memory Organization: x8
- Memory Clock: 200MHz

Helpful Notes:
- ECC memory is designed for use in servers and workstations to prevent data corruption.
- Low voltage memory consumes less power and generates less heat, making it ideal for use in laptops and other portable devices.
- SoDimm form factor is smaller than standard DIMMs, making it suitable for use in laptops and other space-constrained systems.