Samsung M474B5773DH0-YH9 | 2GB DDR3-1333MHz PC3-10600 ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 2 GB
- Speed: 1333 MHz (PC3-10600)
- Form Factor: SoDimm 204-pin
- Error Correction Code (ECC): ECC
- Buffered/Unbuffered: Unbuffered
- CAS Latency: CL9
- Voltage: 1.35V (Low Voltage)
- Rank: Dual Rank
- Pin Configuration: 204-pin
- Memory Organization: x8
- Module Configuration: 256M x 64

Helpful Notes:
- This memory module is designed for use in servers and workstations.
- ECC memory is more reliable than non-ECC memory as it can detect and correct errors.
- The low voltage of this module can help reduce power consumption and heat generation.