MN4GSD31600LV - PNY 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm Dual Rank Memory Module

Here are the technical specifications for the PNY 4GB DDR3-1600MHz Memory Module:

1. Memory Type: DDR3 SDRAM
2. Capacity: 4GB
3. Memory Speed: 1600MHz
4. Memory Standard: PC3-12800
5. Form Factor: 204-Pin SoDimm
6. CAS Latency: CL11
7. Error Correction Code: Non-ECC
8. Buffered/Unbuffered: Unbuffered
9. Rank: Dual Rank
10. Voltage: 1.5V
11. Pin Configuration: 204-pin
12. Memory Architecture: x8

Helpful Notes:
1. This memory module is compatible with laptops and other devices that use DDR3 SDRAM.
2. The dual rank feature of this module allows for improved memory performance.
3. The low voltage of 1.5V helps to reduce power consumption and heat generation.