MR16R0824BN1-CKB - Samsung Rambus 64MB PC800 800MHz non-ECC 45ns 184-Pin RDRAM RIMM Memory Modul

Here are 12 technical specifications for the Samsung Rambus 64MB PC800 800MHz non-ECC 45ns 184-Pin RDRAM RIMM Memory Module:

1. Memory Type: RDRAM (Rambus Dynamic Random Access Memory)
2. Capacity: 64MB
3. Speed: 800MHz
4. Bus Type: 184-pin RIMM (Rambus Inline Memory Module)
5. CAS Latency: 45ns
6. Error Correction Code: Non-ECC (Error Correction Code)
7. Voltage: 2.5V
8. Number of Chips: 16
9. Organization: 8M x 16
10. Memory Rank: Single Rank
11. Memory Configuration: 1 module x 64MB
12. Compatibility: PC800

Helpful notes:
1. RDRAM is a high-speed memory technology that was popular in the late 1990s and early 2000s.
2. Non-ECC memory does not have error correction capabilities and is generally less expensive than ECC memory.
3. This memory module is compatible with systems that support PC800 RDRAM.