MT16KTF51264AZ-1G6 - Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Memory Speed: 1600 MHz
- Capacity: 4 GB
- CAS Latency: CL11
- Pin Count: 240-pin
- Voltage: 1.35V
- Error Correction Code: Non-ECC
- Technology: Unbuffered
- Rank: Dual Rank
- Form Factor: DIMM
- Module Configuration: 512M x 64
- Memory Organization: x8 FBGA DRAM

Helpful Notes:
- Low voltage design helps to reduce power consumption
- Dual rank memory module provides better performance compared to single rank modules
- Unbuffered technology makes it suitable for use in most desktop computers.