MT16KTF51264AZ-1G6M1 - Micron 4GB DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 4 GB
- Memory Speed: 1600 MHz
- Form Factor: DIMM 240-pin
- CAS Latency: CL11
- Error Correction Code: Non-ECC
- Rank: Dual Rank
- Voltage: 1.35V
- Buffered/Unbuffered: Unbuffered
- Technology: Low Voltage
- Pin Configuration: 240 pins
- Data Integrity Check: Non-ECC

Helpful Notes:
- Low voltage technology helps reduce power consumption and heat generation.
- Dual rank memory module provides better performance and stability.
- Unbuffered memory is faster and less expensive than registered memory.