MT16KTF51264HZ-1G4 - Micron 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Size: 4GB
- Memory Technology: DDR3 SDRAM
- Memory Speed: 1333 MHz
- Memory Standard: DDR3-1333/PC3-10600
- Signal Processing: Unbuffered
- CAS Latency: CL9
- Number of Pins: 204-pin
- Form Factor: SoDIMM
- Voltage: 1.35V
- Number of Modules: 1 x 4GB
- Memory Rank: Dual Rank
- Error Checking: Non-ECC

Helpful Notes:
- Low voltage design helps to reduce power consumption and heat generation
- Dual rank memory module provides better performance in multitasking applications
- Non-ECC error checking makes it suitable for use in consumer-grade computers