MT18KSF51272AZ-1G6M1 - Micron 4GB DDR3-1600MHz PC3-12800 ECC Unbuffered CL11 240-Pin DIMM 1.35V Low Voltage Dual Rank Memory Module

Technical Specs:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Memory Speed: 1600 MHz
- Latency Timings: CL11
- Voltage: 1.35V
- Type of Module: ECC Unbuffered DIMM
- Number of Pins: 240
- Rank: Dual Rank
- Error Correction Code (ECC): Yes
- Form Factor: DIMM
- CAS Latency: 11
- Memory Configuration: 512M x 72

Helpful Notes:
- ECC memory is designed for use in servers and workstations to prevent data corruption.
- Low voltage memory can help reduce power consumption and heat generation in systems.
- Dual rank memory can improve overall system performance by allowing for more efficient access to memory.