MV-3T4G3D - Samsung 8GB Kit (2 X 4GB) DDR3-1600MHz PC3-12800 non-ECC Unbuffered CL11 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory

1. Memory Type: DDR3 SDRAM
2. Memory Size: 8GB (2 x 4GB)
3. Memory Speed: 1600MHz
4. Latency Timing: CL11
5. Pin Configuration: 204-pin SODIMM
6. Voltage: 1.35V
7. Rank: Dual Rank
8. Error Correction Code (ECC): Non-ECC
9. Buffered/Unbuffered: Unbuffered
10. Form Factor: SODIMM
11. CAS Latency: CL11
12. Memory Configuration: Dual Channel

Helpful Notes:
1. This memory kit is compatible with laptops and other mobile devices that support DDR3 SODIMM memory.
2. The low voltage of 1.35V helps to reduce power consumption and heat generation, making it ideal for use in laptops and other mobile devices.
3. Dual channel memory configuration provides improved performance by allowing the memory controller to access two memory modules simultaneously.