MZ3S9200HMDP-000C3 - Samsung 200GB Single-Level Cell SAS 6Gb/s 3.5-inch Solid State Drive

1. Capacity: 200GB
2. Interface: SAS 6Gb/s
3. Form Factor: 3.5-inch
4. NAND Flash Memory Type: Single-Level Cell (SLC)
5. Sequential Read Speed: Up to 500MB/s
6. Sequential Write Speed: Up to 400MB/s
7. Random Read Speed: Up to 67,000 IOPS
8. Random Write Speed: Up to 11,000 IOPS
9. Endurance (Drive Writes Per Day): 10
10. MTBF (Mean Time Between Failures): 2 million hours
11. Power Consumption (Active): 9.8W
12. Operating Temperature: 0°C to 70°C

Notes:
1. SLC NAND flash memory provides higher endurance and reliability compared to Multi-Level Cell (MLC) or Triple-Level Cell (TLC) flash memory.
2. SAS interface offers higher data transfer rates and greater scalability compared to SATA interface.
3. MTBF of 2 million hours indicates high reliability and long lifespan of the drive.