NT4GC64B8HB0NS-CG - Nanya 4GB DDR3-1333MHz PC3-10600 non-ECC Unbuffered CL9 204-Pin SoDimm 1.35V Low Voltage Dual Rank Memory Module

Technical Specifications:
- Memory Type: DDR3 SDRAM
- Capacity: 4GB
- Speed: 1333MHz (PC3-10600)
- Latency: CL9
- Pin Count: 204-Pin SoDimm
- Voltage: 1.35V (Low Voltage)
- Rank: Dual Rank
- Error Correction Code (ECC): Non-ECC
- Buffered/Unbuffered: Unbuffered
- Form Factor: SoDimm
- CAS Latency: 9
- Memory Configuration: 512M x 64

Helpful Notes:
- Low voltage feature helps reduce power consumption and heat generation
- Dual rank design improves memory performance
- Unbuffered memory is faster but less reliable than buffered memory.